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| (R) 2N3055 MJ2955 COMPLEMENTARY SILICON POWER TRANSISTORS s s STMicroelectronics PREFERRED SALESTYPES COMPLEMENTARY NPN-PNP DEVICES DESCRIPTION The 2N3055 is a silicon Epitaxial-Base Planar NPN transistor mounted in Jedec TO-3 metal case. It is intended for power switching circuits, series and shunt regulators, output stages and high fidelity amplifiers. The complementary PNP type is MJ2955. 1 2 TO-3 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Parameter NPN PNP V CBO V CER V CEO V EBO IC IB P tot T stg Tj Collector-Base Voltage (I E = 0) Collector-Emitter Voltage (R BE 100) Collector-Emitter Voltage (I B = 0) Emitter-Base Voltage (I C = 0) Collector Current Base Current Total Dissipation at T c 25 o C Storage Temperature Max. Operating Junction Temperature Value 2N3055 MJ2955 100 70 60 7 15 7 115 -65 to 200 200 V V V V A A W o o Unit C C For PNP types voltage and current values are negative. August 1999 1/4 2N3055 / MJ2955 THERMAL DATA R thj-case Thermal Resistance Junction-case Max 1.5 o C/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symbol I CEX I CEO IEBO Parameter Collector Cut-off Current (V BE = -1.5V) Collector Cut-off Current (I B = 0) Emitter Cut-off Current (I C = 0) Test Conditions V CE = 100 V V CE = 100 V V CE = 30 V V EB = 7 V I C = 200 mA 60 T j = 150 o C Min. Typ. Max. 1 5 0.7 5 Unit mA mA mA mA V V CEO(sus) Collector-Emitter Sustaining Voltage (I B = 0) VCER(sus) Collector-Emitter Sustaining Voltage (R BE = 100 ) VCE(sat) V BE h FE fT Is/b Collector-Emitter Saturation Voltage Base-Emitter Voltage DC Current Gain Transition frequency Second Breakdown Collector Current I C = 200 mA 70 V IC = 4 A I C = 10 A IC = 4 A IC = 4 A I C = 10 A I C = 0.5 A V CE = 40 V I B = 400 mA I B = 3.3 A V CE = 4 A V CE = 4 A V CE = 4 A V CE = 10 V 20 5 3 2.87 1 3 1.8 70 V V V MHz A Pulsed: Pulse duration = 300 s, duty cycle 1.5 % For PNP types voltage and current values are negative. 2/4 2N3055 / MJ2955 TO-3 MECHANICAL DATA mm MIN. A B C D E G N P R U V 11.00 0.97 1.50 8.32 19.00 10.70 16.50 25.00 4.00 38.50 30.00 TYP. MAX. 13.10 1.15 1.65 8.92 20.00 11.10 17.20 26.00 4.09 39.30 30.30 MIN. 0.433 0.038 0.059 0.327 0.748 0.421 0.649 0.984 0.157 1.515 1.187 inch TYP. MAX. 0.516 0.045 0.065 0.351 0.787 0.437 0.677 1.023 0.161 1.547 1.193 DIM. P G A D C U V O N R B P003F 3/4 E 2N3055 / MJ2955 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a trademark of STMicroelectronics (c) 1999 STMicroelectronics - Printed in Italy - All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - France - Germany - Italy - Japan - Korea - Malaysia - Malta - Mexico - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A. 4/4 http://www.st.com . |
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